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S16XXXH
SCR
FEATURES IT(RMS) = 16A VDRM = 200V to 800V High surge current capability
K A G
DESCRIPTION The S16XXXH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 100 mA diG /dt = 1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 90C Tc= 90C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 16 10 175 160 128 100 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A
I2t dI/dt Tstg Tj Tl
Symbol VDRM VRRM
Januaryr 1995
Parameter B Repetitive peak off-state voltage Tj = 125C 200
Voltage D 400 M 600 N 800
Unit V
1/5
S16XXXH
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 2.2 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 10 VD=12V (DC) RL=33 Tj= 25C MIN MAX VGT VGD tgt IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.8A/s IG = 90mA IT= 250mA Gate open IG=1.2 IGT ITM= 32A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open ITM= 3 x IT(AV) VR =35V dI/dt=25A/s tp=100s dV/dt=25V/s VD= 67%VDRM Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C MAX MIN TYP MAX MAX MAX MAX MAX MIN MAX 400 100 50 100 1.6 10 2 500 10 25 1.5 0.2 2 100 200 Sensitivity 16 20 50 V V s mA mA V A mA V/s s mA Unit IGM = 4A (tp = 20 s)
ORDERING INFORMATION
S
SCR MESA GLASS CURRENT
2/5
16
16
SENSITIVITY
M
H
PACKAGE : H = TO220 Non-insulated VOLTAGE
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S16XXXH
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W) Tcase (o C)
Rth = 0 o C/W o 1 C/W 2 o C/W 4 o C/W
P (W)
16 14 12 10 8 6 4 2 0 0 2 4
= 30 o = 60
o
16
360
O
-85
14
DC
12
= 1 80 = 120 = 90
o o o
-95
10 8
= 180
o
-105
6 4
I T(AV)(A)
-115
Tamb ( C)
o
2
16
6
8
10
12
14
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average on-state current versus case temperature.
I T(AV) (A)
Fig.4 : Relative variation of thermal impedance versus pulse duration.
Zth/Rth 1
20 18 16 14 12 10 8 6 4 2 0
0
Tcase ( C)
o
DC Zt h( j-c)
0.1
= 180
o
Zt h( j-a)
tp (s)
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
200
Tj initial = 25 C
o
150
100
Ih
50
Tj(oC)
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0 1
10
100
100 0
3/5
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S16XXXH
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
1000
Tj initial = 25oC
200 100
Tj initial o 25 C
I TSM
Tj max
10
Tj max Vto =0.90 V Rt =0.020
I2 t
100 1
tp(ms)
VTM (V)
10
1 0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4/5
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S16XXXH
PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406
REF.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5
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